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MSE PRO™ 4 inch Aluminum Scandium Nitride AlScN Template on Silicon– MSE Supplies LLC

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MSE PRO 4 inch Aluminum Scandium Nitride AlScN Template on Silicon Substrate - MSE Supplies LLC

MSE PRO 4 inch Aluminum Scandium Nitride AlScN Template on Silicon Substrate

SKU: WA0272

  • $ 1,59995
  • Save $ 19200



MSE PRO™ 4 inch Aluminum Scandium Nitride AlScN Template on Silicon Substrate

  • Product SKU#: WA0272
  • Substrate Thickness: Silicon, 525 +/- 30 µm 
  • Substrate Orientation: <100>
  • Diameter: 100 mm +/- 0.5 mm
  • Resistivity: > 500 ohm.cm
  • Thickness of AlScN layer: 800 nm
  • Usable Area: > 90%
  • Total Thickness Variation (TTV):  15 µm
  • Bow/Warp: ≤ 30 µm
  • Surface Roughness: Ra ≤ 10 nm (5 µm x 5 µm area)
  • Polishing: Single side polished (SSP) is standard. Double-side polished (DSP) is available upon request.
  • Package: single wafer containers

Aluminum scandium nitride (AlScN) on silicon refers to the deposition of a thin AlScN on a silicon substrate. This process involves growing a layer of AlScN material on the surface of a sapphire wafer using techniques such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Aluminum scandium nitride (AlScN) is a a wide-band gap semiconductor material composed of aluminum (Al), scandium (Sc), and nitrogen (N). Due to its excellent piezoelectric and acoustic properties, it is an ideal material for high-frequency acoustic devices. It is considered as the most promising substrate for 5G radio frequency SAW/BAW filters.

References: 

1. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire. Applied physics letters 108, no. 23 (2016): 231601

2. Properties of Sc x Al 1-x N (x= 0.27) thin films on sapphire and silicon substrates upon high temperature loading. Microsystem Technologies 22 (2016): 1679-1689