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2" Semi-insulating, Fe-doped, GaN 1.8 um, Gallium Nitride (GaN) Templates on Sapphire (0001)

  • 50600
  • Save $ 13800


  • Conductivity type: semi-insulating 
  • Doping type: Fe compensated
  • Dimension: Φ50.8 mm ± 0.1 mm
  • GaN Thickness:  1.8~2.1 micron 
  • Usable area: >90%
  • Orientation: C plane (0001) ± 0.5°
  • Orientation Flat: (1-100) ± 0.5°, 16.0 ± 1.0 mm
  • Secondary Orientation flat: (11-20) ± 3°, 8.0  ± 1.0 mm
  • Total Substrate Thickness Variation: <15 μm
  • Resistivity (300K): >1x10MΩ·cm
  • Dislocation Density: < 1x10^8 cm^-2 
  • Substrate Structure: GaN/Sapphire (0001)
  • XRD: XRD(102) < 200 arcsec, XRD (002) < 120 arcsec

  • Polishing: single side polished (SSP) to Ra < 0.5nm with CMP, double size polish is available per request.

  • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere. 

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