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Sapphire Wafer, 2 inch, R-plane (1-102), Single Crystal Al2O3

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  • Material: High Purity >99.996%, single crystal Al2O3
  • Dimension: Φ50.8 mm ± 0.1 mm
  • Thickness: 0.43 mm standard
  • Lattice Parameter: a=4.785 A, c=12.991 A
  • Density: 3.98 g/cm3
  • Orientation: R-plane (1-102) 0.2± 0.1 degree off.
  • Primary Flat orientation: Projected C-Axis 45 +/- 2 degree
  • Primary flat length: 16.0 ± 1 mm
  • Total Thickness Variation: <10 μm
  • Bow: <10 μm
  • Warp: <10 μm
  • Polishing: single side polished Ra < 0.5 nm (AFM), double size polish is available per request.
  • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere. 

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