2 in Mg-doped P-type GaN 4 um Gallium Nitride Template on Sapphire (0001)
Features for 2 in Mg-doped P-type Gallium Nitride Template on Sapphire SubstrateProduct No. WA0207
- Conductivity type: P-Type ( Mg-doped)
- Dimension:?ÿ??50.8 mm ?ñ 0.1 mm (2 inch diameter)
- Thickness of GaN: 4?ÿ?ñ 0.5 ?¬m
- Usable area:?ÿ>90%
- Orientation:?ÿC plane (0001) ?ñ 0.5?ø
- Orientation Flat:?ÿ(1-100) ?ñ 0.5?ø, 16.0?ÿ?ñ 1.0 mm
- Secondary Orientation flat:?ÿ(11-20)?ÿ?ñ 3?ø, 8.0 ?ÿ?ñ 1.0 mm
- Total Thickness Variation: <15?ÿ?¬m
- Resistivity (300K): ~10?ÿ???úcm
- Dislocation Density:?ÿ< 5x108 cm-2?ÿ
- Carrier Concentration:?ÿ> 6x1016 cm-3?ÿ
- Substrate Structure: GaN/Sapphire (0001)
- Polishing: single side polished (SSP), double size polish is available per request.
- Package:?ÿpackaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere.?ÿ
- Related References
1.?ÿThermal Annealing Effects on P-Type Mg-Doped GaN Films
Low-resistivity p-type GaN films were obtained by N2-ambient thermal annealing at temperatures above 700?øC for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films was approximately 1?? 106 Omega\cdotcm. After thermal annealing at temperatures above 700?øC, the resistivity, hole carrier concentration and hole mobility became 2 Omega\cdotcm, 3?? 1017/cm3 and 10 cm2/V\cdots, respectively. In photoluminescence measurements, the intensity of 750-nm deep-level emissions (DL emissions) sharply decreased upon thermal annealing at temperatures above 700?øC, as did the change in resistivity, and 450-nm blue emissions showed maximum intensity at approximately 700?øC of thermal annealing.
Thermal Annealing Effects on P-Type Mg-Doped GaN Films. Available from: https://www.researchgate.net/publication/248677447_Thermal_Annealing_Effects_on_P-Type_Mg-Doped_GaN_Films.
2.?ÿOptical characterization of Mg-doped GaN films grown by metal organic chemical vapor phase deposition
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