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2 inch Mg-doped P-type 3~5 um Gallium Nitride (GaN) Template on Sapphire (0001)

  • 25900


  • Conductivity type: P-Type ( Mg-doped)
  • Dimension: Φ50.8 mm ± 0.1 mm (2 inch diameter)
  • Thickness of GaN: 3 ~ 5 um
  • Usable area: >90%
  • Orientation: C plane (0001) ± 0.5°
  • Orientation Flat: (1-100) ± 0.5°, 16.0 ± 1.0 mm
  • Secondary Orientation flat: (11-20) ± 3°, 8.0  ± 1.0 mm
  • Total Thickness Variation: <15 μm
  • Resistivity (300K): ~10 Ω·cm
  • Dislocation Density: < 5x10^8 cm^-2 
  • Carrier Concentration: > 6x10^16 cm^-3 
  • Substrate Structure: GaN/Sapphire (0001)
  • Polishing: single side polished (SSP), double size polish is available per request.
  • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere. 

Related References

1. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

DOI: 10.1143/JJAP.31.L139

Low-resistivity p-type GaN films were obtained by N2-ambient thermal annealing at temperatures above 700°C for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films was approximately 1× 106 Omega\cdotcm. After thermal annealing at temperatures above 700°C, the resistivity, hole carrier concentration and hole mobility became 2 Omega\cdotcm, 3× 1017/cm3 and 10 cm2/V\cdots, respectively. In photoluminescence measurements, the intensity of 750-nm deep-level emissions (DL emissions) sharply decreased upon thermal annealing at temperatures above 700°C, as did the change in resistivity, and 450-nm blue emissions showed maximum intensity at approximately 700°C of thermal annealing.
Thermal Annealing Effects on P-Type Mg-Doped GaN Films. Available from: https://www.researchgate.net/publication/248677447_Thermal_Annealing_Effects_on_P-Type_Mg-Doped_GaN_Films [accessed Jul 01 2018].

 

2. Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

https://doi.org/10.1063/1.1289794

Scanning electron microscopy, micro-Raman, and photoluminescence (PL)measurements are reported for Mg-doped GaN films grown on (0001) sapphiresubstrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mgconcentrations ranging from 1E19 to 1E21 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the triangular regions, where the presence of cubic inclusions was confirmed by micro-Raman measurements. The excitation dependence and temperature behavior of these lines enable us to identify their excitonic nature. From our study we conclude that the interface region between these defects and the surrounding wurtzite GaN could be responsible for PL lines

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