2 in Mg-doped P-type Gallium Nitride GaN Template on Sapphire
Features for 2 in Mg-doped P-type Gallium Nitride Template on Sapphire Substrate
- Conductivity type: P-Type ( Mg-doped)
- Dimension: Φ50.8 mm ± 0.1 mm (2 inch diameter)
- Thickness of GaN: 4.5 ± 0.5 um
- Usable area: >90%
- Orientation: C plane (0001) ± 0.5°
- Orientation Flat: (1-100) ± 0.5°, 16.0 ± 1.0 mm
- Secondary Orientation flat: (11-20) ± 3°, 8.0 ± 1.0 mm
- Total Thickness Variation: <15 μm
- Resistivity (300K): ~10 Ω·cm
- Dislocation Density: < 5x10^8 cm^-2
- Carrier Concentration: > 6x10^16 cm^-3
- Substrate Structure: GaN/Sapphire (0001)
- Polishing: single side polished (SSP), double size polish is available per request.
- Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere.
- Related References
1. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
Low-resistivity p-type GaN films were obtained by N2-ambient thermal annealing at temperatures above 700°C for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films was approximately 1× 106 Omega\cdotcm. After thermal annealing at temperatures above 700°C, the resistivity, hole carrier concentration and hole mobility became 2 Omega\cdotcm, 3× 1017/cm3 and 10 cm2/V\cdots, respectively. In photoluminescence measurements, the intensity of 750-nm deep-level emissions (DL emissions) sharply decreased upon thermal annealing at temperatures above 700°C, as did the change in resistivity, and 450-nm blue emissions showed maximum intensity at approximately 700°C of thermal annealing.
Thermal Annealing Effects on P-Type Mg-Doped GaN Films. Available from: https://www.researchgate.net/publication/248677447_Thermal_Annealing_Effects_on_P-Type_Mg-Doped_GaN_Films.
2. Optical characterization of Mg-doped GaN films grown by metal organic chemical vapor phase deposition
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