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2 in Mg-doped P-type GaN 4 um Gallium Nitride Template on Sapphire (0001),  MSE Supplies LLC

2 in Mg-doped P-type GaN 4 um Gallium Nitride Template on Sapphire (0001)

  • $ 25900

Qty (pieces) Price (per piece)
1 - 1 $ 259.00
2 - 10 $ 239.00
11 - 11+ $ 229.00

Features for 2 in Mg-doped P-type Gallium Nitride Template on Sapphire Substrate

Product No. WA0207
  • Conductivity type: P-Type ( Mg-doped)
  • Dimension:?ÿ??50.8 mm ?ñ 0.1 mm (2 inch diameter)
  • Thickness of GaN: 4?ÿ 0.5 m
  • Usable area:?ÿ>90%
  • Orientation:?ÿC plane (0001) ?ñ 0.5?ø
  • Orientation Flat:?ÿ(1-100) ?ñ 0.5?ø, 16.0?ÿ?ñ 1.0 mm
  • Secondary Orientation flat:?ÿ(11-20)?ÿ?ñ 3?ø, 8.0 ?ÿ?ñ 1.0 mm
  • Total Thickness Variation: <15?ÿ?¬m
  • Resistivity (300K): ~10?ÿ???úcm
  • Dislocation Density:?ÿ< 5x108 cm-2?ÿ
  • Carrier Concentration:?ÿ> 6x1016 cm-3?ÿ
  • Substrate Structure: GaN/Sapphire (0001)
  • Polishing: single side polished (SSP), double size polish is available per request.
  • Package:?ÿpackaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere.?ÿ
  • Related References

1.?ÿThermal Annealing Effects on P-Type Mg-Doped GaN Films

DOI: 10.1143/JJAP.31.L139

Low-resistivity p-type GaN films were obtained by N2-ambient thermal annealing at temperatures above 700?øC for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films was approximately 1?? 106 Omega\cdotcm. After thermal annealing at temperatures above 700?øC, the resistivity, hole carrier concentration and hole mobility became 2 Omega\cdotcm, 3?? 1017/cm3 and 10 cm2/V\cdots, respectively. In photoluminescence measurements, the intensity of 750-nm deep-level emissions (DL emissions) sharply decreased upon thermal annealing at temperatures above 700?øC, as did the change in resistivity, and 450-nm blue emissions showed maximum intensity at approximately 700?øC of thermal annealing.
Thermal Annealing Effects on P-Type Mg-Doped GaN Films. Available from: https://www.researchgate.net/publication/248677447_Thermal_Annealing_Effects_on_P-Type_Mg-Doped_GaN_Films.

2.?ÿOptical characterization of Mg-doped GaN films grown by metal organic chemical vapor phase deposition

https://doi.org/10.1063/1.1289794

Scanning electron microscopy,?ÿmicro-Raman, and?ÿphotoluminescence?ÿ(PL)measurements are reported for Mg-doped?ÿGaN?ÿfilms?ÿgrown?ÿon (0001)?ÿsapphire?ÿsubstrates by low-pressure metal organic chemical vapor phase?ÿdeposition.?ÿThe surface morphology, structural, and optical properties of?ÿGaN?ÿsamples with?ÿMg?ÿconcentrations ranging from 1E19?ÿto 1E21?ÿcmƒ??3?ÿhave been studied. In the scanning micro graphs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional?ÿgrowth.?ÿThe density and size of these structures increase with the amount of?ÿmagnesium?ÿincorporated in the samples. In the?ÿphotoluminescence?ÿspectra, intense lines were found at 3.36 and 3.31 eV on the triangular regions, where the presence of cubic inclusions was confirmed by micro-Raman measurements. The excitation dependence and temperature behavior of these lines enable us to identify their excitonic nature. From our study we conclude that the interface region between these defects and the surrounding wurtzite?ÿGaN?ÿcould be responsible for?ÿPL?ÿlines

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