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100 mm N Type (P-doped) Prime Grade Silicon Wafer <100>, SSP, 1-10 ohm-cm

  • $ 4490


100 mm N Type (P-doped) SEMI Standard Prime Grade Silicon Wafer <100>, 1-10 ohm-cm, Single Side Polished, 4 inch Si Wafer

Product SKU#: WA0802

Product Specifications

  • Material: Single Crystal Silicon Wafer
  • Growth Method: MCZ
  • Orientation: <100>
  • Diameter: 100 mm ± 0.5 mm
  • Thickness: 525 um ± 20 um (SSP) 
  • Primary Flat Orientation: <110> +/-1°
  • Primary Flat Length: 32.5 +/- 2.5 mm
  • Secondary Flat Orientation: 90° from primary flat
  • Secondary Flat Length: 18.0 +/- 2.0 mm
  • Type/ Dopant: N/ Phosphorus                                              
  • Electrical Resistivity: 1-10 ohm-cm                              
  • RRV: ≤8% (6mm)
  • Oxygen Content: ≤ 1.6 x 10^18 atoms/cm3
  • Carbon Content: ≤ 0.5 ppm
  • GBIR/ TTV: ≤ 5 μm                                          
  • WARP: ≤ 30 μm  
  • BOW: ≤ 30 μm
  • Front Surface: CMP Polished, Ra < 0.5 nm (single side polished, SSP)
  • LPD & COP Particles: <=20 @ >=0.3 μm size
  • Package: Packaged in a class 100 clean room environment, in cassettes of 25 pcs under vacuum or in single wafer containers. 

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