10 mm x 10 mm A-plane 4H N-Type SiC, Silicon Carbide Crystal Substrate
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| Product SKU# | WA0381 | ||||
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Size |
10 mm x 10 mm |
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Thickness |
350 um |
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Type |
4H-N |
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Resistivity |
0.015 ~ 0.028 ohm.cm |
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MPD |
< 20 cm-2 |
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Surface Roughness |
Mirror Polish on both sides Ra < 1 nm |
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PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS
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Property |
4H-SiC Single Crystal |
6H-SiC Single Crystal |
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Lattice Parameters (Å) |
a=3.076 c=10.053 |
a=3.073 c=15.117 |
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Stacking Sequence |
ABCB |
ABCACB |
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Density |
3.21 |
3.21 |
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Mohs Hardness |
~9.2 |
~9.2 |
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Thermal Expansion Coefficient (CTE) (/K) |
4-5 x 10-6 |
4-5 x10-6 |
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Refraction Index @750 nm |
no = 2.61 ne = 2.66 |
no = 2.60 ne = 2.65 |
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Dielectric Constant |
c ~ 9.66 |
c ~ 9.66 |
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Doping Type |
N-type or Semi-insulating |
N-type or Semi-insulating |
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Thermal Conductivity (W/cm-K @298 K) (N-type, 0.02 ohm-cm) |
a~4.2 c~3.7 |
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Thermal Conductivity (W/cm-K @298 K) (Semi-insulating type) |
a~4.9 c~3.9
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a~4.6 c~3.2
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Band-gap (eV) |
3.23 |
3.02 |
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Break-Down Electrical Field (V/cm) |
3-5 x106 |
3-5 x106 |
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Saturation Drift Velocity (m/s) |
2.0 x 105 |
2.0 x 105 |
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Wafer and Substrate Sizes |
Wafers: 2, 3, 4, 6 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request |
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Product Grades |
A Grade Zero micropipe density (MPD 1 cm-2) B Grade Production grade (MPD 5 cm-2) C Grade Research grade (MPD 15 cm-2) D Grade Dummy grade (MPD 30 cm-2) |
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Price
MSE Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.
Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications.
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