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Silicon Carbide Crystal Ingots N-type or Semi-insulating

To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.

Silicon Carbide Crystal Ingots N-type or Semi-insulating, available sizes: 2 inch, 4 inch, 6 inch

Please contact us for a quote.


PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property

4H-SiC Single Crystal

6H-SiC Single Crystal

Lattice Parameters (Å)

a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence

ABCB

ABCACB

Density

3.21

3.21

Mohs Hardness

~9.2

~9.2

Thermal Expansion Coefficient (CTE) (/K)

4-5 x 10-6

4-5 x 10-6

Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant

c ~ 9.66

c ~ 9.66

Doping Type

N-type or Semi-insulating

N-type or Semi-insulating

Thermal Conductivity (W/cm-K @298K)

(N-type, 0.02 ohm-cm)

a~4.2

c~3.7

 

Thermal Conductivity (W/cm-K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

a~4.6

c~3.2

 

Band-gap (eV)

3.23

3.02

Break-Down Electrical Field (V/cm)

3-5 x 106

3-5 x 106

Saturation Drift Velocity (m/s)

2.0 x 105

2.0 x 105

Ingot Sizes

Diameter: 2, 3, 4, 6 inch

Thickness: 5-10 mm or 10-15 mm

other sizes are available and can be custom-made upon request

Product Grades

A Grade Zero micropipe density (MPD 1 cm-2) - not available as ingots

B Grade Production grade (MPD cm-2) - not available as ingots

C Grade Research grade (MPD 10 cm-2)

D Grade Dummy grade (MPD 15 cm-2)

 

Price

MSE Supplies offers the best price on the market for high quality SiC ingots, wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.


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