MSE PRO Manganese Phosphorus Trisulfide (MnPS3) Crystal 2D Material

  • £30700

MSE PRO™ Manganese Phosphorus Trisulfide (MnPS3) Crystal 2D Material

Among the many materials with 2D structures, the family of transition metal chalcogenophosphates (MPX3; where M = V, Cr, Mn, Fe, Co, Ni, Cu, Zn, and Cd and X = S, Se, and Te) has recently attracted the growing attention from the research community. This interest arises from its extensive variety of electronic properties. Thus, these materials exhibit a wide bandgap (up to 3.5 eV) that broadens their potential application in optoelectronics; in addition, some of these materials exhibit cooperative magnetic properties, in particular antiferromagnetism, which has been proven to persist even in the 2D limit. Interestingly, the reliance between the structural, electronic and magnetic properties boosts their potential in spintronics. Furthermore, these materials have also been studied as promising candidates for electrocatalytic applications.

As a member of MPX3, Manganese Phosphorus Trisulfide (MnPS3) is a highly resistive broad band semiconductor. It has an isotropic antiferromagnetic behavior and can be used as a photocatalyst for water splitting, field-effect transistors, magnetic tunnel junction and spintronics devices.

Technical Data

Chemical Name Manganese Phosphorus Trisulfide
Synonyms Manganese Phosphosulphide, Manganese Thiophosphate
Chemical Formula MnPS3
Molecular Weight (g/mol) 182.07
CAS Number 20642-09-5
Bandgap (eV) 2.1-3.0
Density (g/cm3) 2.68
Néel Temperature (K) 78
Product Area Size (mm2) ~10(CM3024), ~25(CM3025), ~100(CM3026)
Purity 99.99%
Material Properties Magnetic Semiconductor
Structure Monoclinic
Color Green


1. Molecular stabilization of chemically exfoliated bare MnPSlayers. Dalton Transactions 50, no. 44 (2021): 16281-16289.

2. MnPS3 spin-flop transition-induced anomalous Hall effect in graphite flake via van der Waals proximity coupling. Nanoscale 12, no. 45 (2020): 23266-23273.

3. Persistence of magnetism in atomically thin MnPScrystals. Nano letters 20, no. 4 (2020): 2452-2459.