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MSE PRO AlGaN/GaN HEMT on 4 inch Sapphire Wafer

  • £76000
  • Save £5900


MSE PRO AlGaN/GaN HEMT transistors (high electron mobility transistors) grown on sapphire substrate

Other layer structures can be custom made upon request. Please contact us for a quote.

SKU WA0285
Substrate Type Flat Sapphire
Polishing

Single Side Polished (standard)

Double Sides Polished (available upon request)

Dimension 100+/-0.2 mm (4 inch)
Orientation C plane (0001) off angle toward M-axis 0.2+/-0.1 deg
Thickness 660+/-25 um
Epilayer Structure ~2nm GaN/~25nm AlGaN/~1nm AlN/~300nm GaN/~2um C-doped GaN/~20nm AlN buffer/ Sapphire
Roughness(Ra) ~0.5 nm
Dislocation density <1x109 cm-2
Rs <400ohm/sq
2DEG Ns >8x1012 cm-2
2DEG Mobility >1500 cm2/Vs
Usable area >90%

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