Anric Technologies Benchtop Atomic Layer Deposition (ALD) System AT410
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SKU#: AN-AT410
Atomic Layer Deposition (ALD) is a powerful thin-film deposition technique. Compared to traditional Chemical Vapor Deposition (CVD), ALD allows even higher quality surface layer with nearly pinhole-free, excellent uniformity and conformal (coating and backside, filling holes even in porous substrates). These advantages are related to its controllable process. The whole process is continuous and self-limiting, which means the material in the chamber is slowly deposited by a precursor separately in single atomic layer at a time and the steps are repeated until achieving desired thickness. It is widely used in electronic, biomedical, photovoltaic and other applications.
MSE Supplies offers the Benchtop Atomic Layer Deposition System AT410 from Anric Technologies.
The AT410 is the most cost-effective thermal ALD tool on the market with customizable chucks/platen of chambers (for 3D parts). It is specially designed for simple operation and installation with a focus on research and development labs and metrology markets, where small size and cost effectiveness are the largest concerns.
AT410 has fast cycling capability (up to 1.2nm/min Al2O3) and high exposure, deep penetration processing available. It has smallest footprint on market (2.5 sq ft), bench top installation and cleanroom compatible.
Country of Origin: Made in USA
Manufacturer: Anric Technologies
Main Features:
- Small footprint (~ 15 in3 or 38.1 cm3)
- Semiconductor-grade metal sealed lines and high temperature compatible fast pulsing ALD valves.
- Ultrafast MFC for integrated inert gas purge.
- 4″ circular chuck customizable for smaller sizes or other shapes (11 mm tall).
- 3 organometallic precursors and 2 (up to 3) counter reactants.
- Heated lines throughout (from precursor to chamber).
- All aluminum (semiconductor grade) chamber ‒ range up to 320°C
- 7″ touchscreen PLC controller (no PC required)
- Lifetime process development assistance
- 1 year warranty (non-consumable parts and labor included).
- 3 years process support
Options:
- Customized chuck/platen (square, indents for smaller pieces, powders)
- Customized chamber (thicker substrates)
- ATOzone – Ozone generator (required for some films: Pt, Ir, SiO2, MoO2, high quality Al2O3 below 60°C, high quality HfO2)
- Optional – Ozone Safety Monitor w real time detection of ambient ozone gas
- QCM (Quartz Crystal Microbalance)
- Glovebox integration (typically required to not expose substrate to moisture; oxygen, etc..)
- External control – PC/software link (allows programing and running, remotely)
- Ventable Precursor cabinet
- Spare Chamber
- IGPA (inert gas pressure assist)for low vapor pressure precursors
- Higher temperatures on precursors (to 180°C)
- Third counter reactant
- Software control of third counter reactant
Please contact us for vacuum pump options.
Specifications
| Process Flow / Chamber Geometry | Cross flow with point source and flow optimized chamber shape |
|
Chamber temperatures |
RT to 320°C ± 1 °C |
|
Precursor temperatures |
RT to 150°C ± 2°C (w/ heating jacket), can upgrade to 180°C |
| Vacuum Pumping (min) | 15 cfm, (pump recommended to be 3-4ft from machine) PFPE oil required (dry pump option) |
| Typical Operating Pressure | 200 mtorr |
| Dimensions | 23” (586mm) wide, 23” (586mm) deep, 15” (405mm) tall |
| Weight | ~100lb (45kg) |
| Required Power | 110-120 VAC, single phase, 50/60Hz; 15Amp |
About Anric Technologies: Anric Technologies was founded in 2014 by researchers from Harvard University to address the gap in the market for benchtop ALD tools designed and optimized for small samples and small budgets.
MSE Supplies is an authorized distributor of Anric Technologies for USA and Canada.