MSE PRO™ 3C-N Type Silicon Carbide (3C-SiC) Square Substrate, Dummy Grade

MSE Supplies offers 3C-N Type Silicon Carbide SiC (3C-SiC) Substrates. It has a crystal structure of silicon carbide where the silicon and carbon atoms are arranged in a cubic lattice with diamond-like structure. It has several superior properties than the widely used 4H-SiC, such as higher electron mobility and saturation velocity. The performance of 3C-SiC power devices is expected to be better, cheaper, and easier to manufacture than the currently mainstream 4H-SiC wafer. It is exceptionally suitable for power electronic devices.

Specification:

Grade	Dummy Grade
Size	10mmx10mm+/-0.2mm 5mmx5mm+/- 0.2mm
Thickness	350 um +/- 25 um
Wafer Orientation	On axis: <111> +/-0.5 deg
Polytype	3C
Polishing	Double-side polished
Micropipe Density (MPD)	<0.5 cm^-2
Electrical Resistivity	≤0.0008 Ohm.cm
TTV	≤5um
Bow	≤15um
Warp	≤30um
Roughness	C face polish Ra≤1nm
	Si face CMP Ra≤0.2nm

* Please contact us if you need more detailed specification.

**For production grade, please contact us for availability.

PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property	4H-SiC Single Crystal	3C-SiC Single Crystal
Lattice Parameters (Å)	a=3.082 c=10.092	a=4.35
Stacking Sequence	ABCB	ABC
Density (g/cm³)	3.23	2.36
Mohs Hardness	~9.2	~9.2
Thermal Expansion Coefficient (CTE) (/K)	4-5 x 10^-6	3-4 x10^-6
Dielectric Constant	c ~ 9.66	c ~ 9.72
Doping Type	N-type or Semi-insulating or P-type	N-type
Band-gap (eV)	3.26	2.4
Saturation Drift Velocity (m/s)	2.0 x 10⁵	2.7 x 10⁵
Wafer and Substrate Sizes	Wafers: 2, 4, 6 inch; smaller substrates: 5x5, 10x10mm, other sizes are available and can be custom-made upon request

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.

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