4 in Silicon Carbide 4H-SiC N-Type Ingot, Production Grade
4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade
6 in Silicon Carbide 4H-SiC N-Type SiC Ingot
6 in Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
8 inch Silicon Carbide Wafers 4H-SiC N-Type
MSE PRO (001) Beta Gallium Oxide Homoepitaxial Wafer (Ga2O3-on-Ga2O3), N-type
MSE PRO (010) Beta Gallium Oxide Homoepitaxial Wafer (Ga2O3-on-Ga2O3), Semi-Insulating
MSE PRO 1 Cassette (qty. 25) of 100 mm N Type (P-doped) Prime Grade Silicon Wafer <100>, SSP, 1-10 ohm-cm
MSE PRO 1 Cassette (qty. 25) of 100 mm P Type (B-doped) Prime Grade Silicon Wafer <100>, SSP, 10-20 ohm-cm
MSE PRO 1 in x 1 in Monolayer Graphene Film on 500um Quartz Substrate
MSE PRO 1 inch Sapphire Wafer C-Plane Single or Double Side Polish Al2O3 Single Crystal
MSE PRO 1" JGS3 Fused Silica Wafer, 500 μm Thick, DSP, w/ Bevel, Primary Flat Only
MSE PRO 10 mm x 10 mm 4H N-Type SiC, Research Grade, Silicon Carbide Crystal Substrate
MSE PRO 10 mm x 10 mm 6H Semi-Insulating Type SiC, Research Grade, Silicon Carbide Crystal Substrate
MSE PRO 10 mm x 10 mm A-plane <11-20> 4H N-Type SiC, Silicon Carbide Crystal Substrate
MSE PRO 10 mm x 10.5 mm Fe-Doped Semi-Insulating Gallium Nitride Single Crystal C Plane (0001)
MSE PRO 10 mm x 10.5 mm Ge-doped N-type Gallium Nitride Single Crystal C plane (0001)
MSE PRO 10 mm x 10.5 mm, Undoped, N-type, Gallium Nitride Single Crystal Substrate C plane (0001)
MSE PRO 10 x 10 x 0.5 mm N Type (P-doped) Prime Grade Silicon Wafer Substrate <100>, SSP, 1-10 ohm-cm
MSE PRO 10 x 10 x 0.5 mm P Type (B-doped) Prime Grade Silicon Wafer Substrate <100>, SSP, 10-20 ohm-cm
