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Silicon Carbide SiC

MSE PRO 4 inch 3C-N Type Silicon Carbide Wafers (3C-SiC) - MSE Supplies LLC

MSE PRO 2 inch 3C-N Type Silicon Carbide Wafers (3C-SiC), Dummy Grade

£1,29700 Save £15600
MSE PRO 3C-N Type Silicon Carbide Wafers (3C-SiC) Sample Size - MSE Supplies LLC

MSE PRO 3C-N Type Silicon Carbide (3C-SiC) Square Substrate, Dummy Grade

£13100 Save £1600

What are Silicon Carbide (SiC) Wafers & Substrates?

Silicon Carbide (SiC) wafers and substrates are specialized materials used in semiconductor technology made from silicon carbide, a compound known for its high thermal conductivity, excellent mechanical strength, and wide bandgap. Exceptionally hard and lightweight, SiC wafers and substrates provide a robust foundation for fabricating high-power, high-frequency electronic devices, such as power electronics and radio frequency components. 

Silicon carbide wafers’ unique properties make them ideal for applications requiring high-temperature operation, harsh environments, and improved energy efficiency. 

Compared to conventional Si devices, SiC-based power devices have faster switching speeds, higher voltages, lower parasitic resistances, smaller sizes, and less cooling required due to high-temperature capability.

Silicon Carbide (SiC) Wafers & Substrates Applications

Silicon carbide wafers are utilized in electronic devices like power diodes, MOSFETs, high-power microwave devices, and RF transistors, enabling efficient energy conversion and power management. SiC wafers and substrates also find use in automotive electronics, aerospace systems, and renewable energy technologies. 

Silicon carbide wafers and SiC substrates are also employed in gas and chemical sensors and advanced research fields like quantum computing and high-frequency communications, driving innovation and performance in various technological domains. High-power MMIC applications often use silicon carbide wafers and substrates. SiC also functions as a substrate for the epitaxial growth of GaN and higher-power MMIC devices.

How Do You Choose Silicon Carbide Wafers & SiC Substrates?

When making silicon carbide wafer and SiC substrate choices, consider the following parameters:

  • Doping: Select appropriate dopants (e.g., nitrogen, aluminum) for desired electrical properties in SiC material.
  • Wafer Size: Evaluate available sizes to ensure compatibility with your fabrication process.
  • Surface Roughness: Assess low roughness values (e.g., RMS <1 nm) to prevent issues during deposition or device fabrication.
  • Crystal Orientation: Determine the desired orientation (e.g., 4H-SiC, 6H-SiC) for specific device performance.
  • Thickness: Determine required wafer thickness based on mechanical and electrical requirements.
  • Defect Density: Evaluate defect presence to improve device performance.
  • Resistivity: Consider the resistivity range to match the intended electrical behavior of SiC material.

MSE Supplies will customize silicone carbide wafers and substrates to meet your requirements. Custom-made epitaxial wafers such as SiC-on-SiC and GaN-on-SiC wafers are also available. Please request a quote and learn about the solutions we provide.

Order Silicon Carbide Wafers & SiC Substrates from MSE Supplies

MSE Supplies provides the largest selection of silicon carbide wafers and SiC substrates for the lowest price on the market. If you have questions regarding our SiC wafers and substrate, contact us online or at (520)789-6673.