Zinc oxide is a wide band-gap semiconductor material. It has broad potential applications in high-efficiency semiconductor photoelectronic devices, semiconductor photocatalysis and diluted magnetic semiconductors. Because of it lattice integrity, ZnO single crystals are essential for the fabrication of high-quality ZnO-based semiconductor devices. It is also an ideal substrate material for epitaxial growth of various thin films. MSE Supplies offers many options for ZnO crystals and substrates to meet customers' specific technical requirements. Please contact us to discuss your requirements with our scientists and engineers.
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Main Parameters
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Crystal structure
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Hexagonal |
| Purity |
99.99% |
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Lattice parameters
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a=3.252 A, c=5.313 A
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Density
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5.7 g/cm3
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Hardness
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4 Mohs
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Melting point
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1975 degree C
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Thermal expansion coefficient (CTE)
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6.5 x 10^-6 /K along a axis, 3.7 x 10^-6 /K along c axis
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Seebeck coefficient
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1200 uV/K at 300 K
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Thermal conductivity
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0.006 Cal/cm/K
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Optical transmission
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> 50% for 2mm thickness (wavelength 400nm ~ 600nm)
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Crystal orientation
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C plane (0001), A plane (11-20), M plane (1-100) +/-0.5 deg
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Size (mm)
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5x5 mm, 10x10 mm, 25x25 mm, other sizes and orientations are available upon request
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Surface roughness
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Ra < 5A (AFM surface roughness measurement)
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Surface polishing
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Single side polished (SSP) or double side polished (DSP). CMP polishing on either O-face or Zn-face.
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Package
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Packed with class 100 clean bag in class 1000 clean room
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References:
Book chapter: General properties of zinc oxide. PDF
