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Sapphire Substrate - GaN on 2 inch Sapphire Substrate (GaN/Sapphire) | MSE Supplies LLC

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MSE PRO AlGaN/GaN HEMT on 2 inch Sapphire Wafer

MSE PRO AlGaN/GaN HEMT on 2 inch Sapphire Wafer

SKU: WA0230

  • $ 62595


AlGaN/GaN HEMT transistors (high electron mobility transistors) grown on sapphire substrate

Other layer structures can be custom made upon request. Please contact us for a quote.


  • Product SKU# WA0230 for SSP, WA0231 for DSP
  • Substrate: C plane Sapphire (0001), 2 inch diameter sapphire wafer, 430 +/- 25 um thickness
  • Thickness of GaN buffer (um): 2 um
  • AlGaN thickness (nm): 25 nm
  • AlN thickness: 1 nm
  • GaN layer thickness: 300 nm
  • Sheet resistance (ohms/sq): <400
  • Electron mobility (cm2/V-sec): >1500 
  • Carrier concentration (/cm): >8e12
  • Usable Area: >90%

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