MSE PRO 4 inch Silicon-doped N-type Gallium Nitride Single Crystal
MSE PRO™ 4 inch Silicon-doped N-type Gallium Nitride Single Crystal
MSE Supplies offers high quality Production Grade 4 inch Silicon-doped N-type Gallium Nitride Single Crystal. Customers from all over the world have trusted MSE Supplies as their preferred supplier of GaN crystal substrates. These GaN free standing is widely used for laser diodes, power electronics, RF devices, etc.
Specification:
| SKU# | WA0268 | WA0269 | WA0270 |
| Grade | Production Grade | Research Grade | Dummy Grade |
| Diameter | 100 ± 0.3 mm | ||
| Thickness | 450 ± 30 um | ||
| Conductivity Type | N-type | ||
| Dopant | Silicon doping | ||
| Wafer Orientation | Orientation: C-plane (0001) off angle toward M-axis 0.5 deg ± 0.15 deg | ||
| FWHM (002) | < 80 arcsec | ||
| FWHM (102) | < 80 arcsec | ||
| Electrical Resistivity (300K) | <0.05 Ohm-cm | ||
| Usable area | ≥ 90 % | ≥80 % | ≥ 70 % |
| Primary Flat Orientation | M-plane (10-10) ± 2 deg | ||
| Primary Flat Length | 32 ± 1 mm | ||
| Secondary Flat Orientation | Ga face, 90° clockwise from primary flat orientation flat plane | ||
| Secondary Flat Length | 18 ± 1 mm | ||
| TTV | ≤ 30 um | ||
| Bow | ± 30 um | ||
| Edge bevel | Beveled | ||
| Polishing | Single side polished, Front surface: Ra < 0.5 nm; double side polished available upon request |
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| Package | packaged in a class 100 clean room environment, in single wafer container | ||
Please contact us for bulk order or customization.
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