MSE PRO 4 inch N-type Si-doped GaN 4 um Gallium Nitride Template on Sapphire (0001)
MSE PRO 4 inch N-type Si-doped GaN 4 um Gallium Nitride Template on Sapphire
Product No. WA0237- Conductivity type: N-Type (Si-doped)
- Dimension: 100 mm +/- 0.1 mm (4 inch diameter)
- GaN Thickness: 4.5 +/- 0.5 um
- Usable area: > 90%
- Orientation of GaN: C plane (0001) off angle toward A-axis 0.2 ± 0.1 deg
- Primary Orientation Flat of GaN: (1-100) +/- 0.2 deg, length 30.0 +/- 1.0 mm
- Total Thickness Variation: < 25 um
- Resistivity (300K): < 0.05 Ohm-cm
- Dislocation Density: < 5x10^8 cm^-2
- Carrier concentration (~ doping concentration): > 2x1018 cm-3
- Mobility > 200 cm2/V-s
- Surface AFM RMS: < 0.5 nm
- Sapphire substrate thickness: 650 +/- 25 um
- Orientation of sapphire substrate: C plane (0001) off angle toward M-axis 0.2 ± 0.1 deg, length 30.0 +/- 1.0 mm
- Substrate Structure: GaN/Sapphire (0001)
- Polishing: single side polished (SSP), double side polish is available per request.
- Package: packaged in a clean room environment, in cassettes or single wafer containers.
Related References
1. Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
https://doi.org/10.1143/JJAP.31.2883
2. Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
https://doi.org/10.1063/1.371377
3. The role of dislocation scattering in n-type GaN films
https://doi.org/10.1063/1.122012
4. Activation energies of Si donors in GaN
https://doi.org/10.1063/1.115805
ABSTRACT
The electronic properties of Si donors in heteroepitaxial layers of GaN were investigated. The n-type GaN layers were grown by metalorganic chemical vapor deposition and either intentionally doped with Si or unintentionally doped. The samples were evaluated by variable temperature Hall effect measurements and photoluminescence (PL) spectroscopy. For both types of samples the n¨«type conductivity was found to be dominated by a donor with an activation energy between 12 and 17 meV. This donor is attributed to Si atoms substituting for Ga in the GaN lattice (SiGa). The range of activation energies is due to different levels of donor concentrations and acceptor compensation in our samples. The assignment of a PL signature to a donor acceptor pair recombination involving the Si donor level as the initial state of the radiative transition yields the position of the optical Si donor level in the GaN bandgap at uEc(22+/-4) meV. A deeper donor level is also present in our GaN material with an activation energy of 34 meV which is tentatively assigned to oxygen donors substituting for nitrogen (ON).