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Ge Germanium Crystal Substrate,  MSE Supplies

Ge Germanium Wafers and Crystal Substrates

  • €13695


Main Product Parameters
Growth method
Czochralski method
Crystal structure
M3
Unit cell constant
a=5.65754 Å
Density
5.323 g/cm3
Melt point
937.4 °C
Doped material
Undoped
Sb - doped
In / Ga - doped
Type
N
N
P
Resistivity
35 Ohm-cm
0.05 Ohm-cm
0.05~0.1 Ohm-cm
EPD
103 /cm2
103 /cm2
103 /cm2
Size
10x5, 10x10, 15x15, 20x15, 20x20mm
dia 2" x 0.5mm, dia 1" x 0.5mm, other sizes are available upon request
Thickness
0.5mm, 1.0mm
Polishing
Single or double side polished
Crystal orientation
(100), (110), (111)
Surface roughness Ra:
Rms or Ra ~ 5 A
Package
Sealed in class 100 clean bag packed in class 1000 clean room