Ge Germanium Wafers and Crystal Substrates
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Main Product Parameters
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Growth method
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Czochralski method
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Crystal structure
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M3
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Unit cell constant
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a=5.65754 Å
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Density
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5.323 g/cm3
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Melt point
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937.4 °C
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Doped material
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Undoped
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Sb - doped
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In / Ga - doped
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Type
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N
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N
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P
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Resistivity
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35 Ohm-cm
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0.05 Ohm-cm
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0.05~0.1 Ohm-cm
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EPD
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<5000 /cm2
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<5000 /cm2
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<5000 /cm2
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Size
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10x5, 10x10, 15x15, 20x15, 20x20mm
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dia 2" x 0.5mm, dia 1" x 0.5mm, other sizes are available upon request
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Thickness
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0.5mm, 1.0mm
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Polishing
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Single or double side polished
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Crystal orientation
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(100), (110), (111)
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Surface roughness Ra:
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Rms or Ra ~ 5 A
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Package
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Sealed in class 100 clean bag packed in class 1000 clean room
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