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GaAs Gallium Arsenide Crystal Substrates,  MSE Supplies

GaAs Gallium Arsenide Crystal Substrates

  • €5595


Please contact us for options for GaAs crystal substrates and wafers, such as doping, size, surface polishing, and other product parameters.

Main Parameters for GaAs Gallium Arsenide Crystal Substrates

single crystal
Dopant
Conduction type
Carrier concentration cm-3
Growth method
Max size
GaAs
None
SI, semi-insulating
/
LEC
HB
Dia. 3
Si
N type
>5 x 10^17
Cr
SI, semi-insulating
/
Fe
N type
~2 x 10^18
Zn
P type
>5 x 10^17
Sizes (mm)
10x10mm, 2 inch diameter
Special size and orientation options are available upon request
Surface Roughness
Surface roughness(Ra): <= 5A
Polishing
Single or double side polished (standard is SSP)