MSE PRO 4 inch Aluminum Scandium Nitride AlScN Template on Silicon Substrate
MSE PRO™ 4 inch Aluminum Scandium Nitride AlScN Template on Silicon Substrate
- Product SKU#: WA0272
- Substrate Thickness: Silicon, 525 +/- 30 µm
- Substrate Orientation: <100>
- Diameter: 100 mm +/- 0.5 mm
- Resistivity: > 500 ohm.cm
- Thickness of AlScN layer: 800 nm
- Usable Area: > 90%
- Total Thickness Variation (TTV): ≤ 15 µm
- Bow/Warp: ≤ 30 µm
- Surface Roughness: Ra ≤ 10 nm (5 µm x 5 µm area)
- Polishing: Single side polished (SSP) is standard. Double-side polished (DSP) is available upon request.
- Package: single wafer containers
Aluminum scandium nitride (AlScN) on silicon refers to the deposition of a thin AlScN on a silicon substrate. This process involves growing a layer of AlScN material on the surface of a sapphire wafer using techniques such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Aluminum scandium nitride (AlScN) is a a wide-band gap semiconductor material composed of aluminum (Al), scandium (Sc), and nitrogen (N). Due to its excellent piezoelectric and acoustic properties, it is an ideal material for high-frequency acoustic devices. It is considered as the most promising substrate for 5G radio frequency SAW/BAW filters.
References: