SKU#: AN-AT650P

Atomic Layer Deposition (ALD) is a powerful thin-film deposition technique. Compared to traditional Chemical Vapor Deposition (CVD), ALD allows even higher quality surface layer with pinhole-free, excellent uniformity and conformal (coating even the backside, filling holes even in porous substrates and powders). These advantages are related to its controllable process. The whole process is continuous and self-limiting, which means the material in the chamber is slowly deposited by a precursor separately in single atomic layer at a time and the steps are repeated until achieving desired thickness. It is widely used in electronic, biomedical, photovoltaic and other applications.

Plasma ALD (PE-ALD) allows for:

Faster deposition rates and/or lower deposition temperatures.
Improved film properties: density, adhesion and crystallinity.
Compatibility with a broader range of precursors.
Better control of thin film material properties (percent oxygen/nitrogen, etc..).
Allows for the more efficient pre-cleaning of surfaces (oxygen plasma).
Deposition of metals by using forming gas or hydrogen plasma.

MSE Supplies offers the Benchtop Plasma Atomic Layer Deposition System AT650P from Anric Technologies.

The AT650P is the most cost-effective thermal ALD tool on the market with customizable chucks/platen. It is specially designed for simple operation and installation with a focus on research and development labs, where small size and cost effectiveness are the largest concerns.

AT650P has fast cycling capability (up to 1.2nm/min Al₂O₃) and high exposure, deep penetration processing available. It has smallest footprint on market, bench top installation and cleanroom compatible.

Country of Origin: Made in USA

Manufacturer: Anric Technologies

Main Features:

Small footprint (~ 15 in³ or 38.1 cm³)
Now with a new advanced hollow cathode source

Featuring: low oxygen contamination (in nitrides, etc..), high electron density, low plasma damage

Semiconductor-grade metal sealed lines and high temperature compatible fast pulsing ALD valves.
Ultrafast MFC for integrated inert gas purge.
6″ circular chuck customizable for smaller sizes or other shapes..
4 organometallic precursors (3 heated to 185 °C) and 2 (up to 4) counter reactants.
Heated lines throughout (from precursor to chamber).
Substrate temperature to 400°C
10″ touchscreen PLC controller (no PC required)
1 year warranty (non-consumable parts and labor included).
3 years process support

Options:

Customized chuck/platen (square, indents for smaller pieces, powders)
QCM (Quartz Crystal Microbalance)
Glovebox integration or load lock (typically required to not expose substrate to moisture; oxygen, etc..)
External control – PC/software link (allows programing and running, remotely)
Bubblers and/or larger capacity precursor bottles
Two additional counter-reactant lines

Please contact us for vacuum pump options.

Specifications:

Chamber temperatures	RT to 400°C ± 1 °C
Precursor temperatures	RT to 185°C ± 2°C (w/ heating jacket)
Vacuum Pumping (min)	19.5 cfm wet pump is required
Dimensions	23” (586mm) wide, 31” (787mm) deep, 38” (965mm) tall
Weight	~100lb (45kg)
Required Power	110-120 VAC, single phase, 50/60Hz; 15Amp

About Anric Technologies: Anric Technologies was founded in 2014 by researchers from Harvard University to address the gap in the market for benchtop ALD tools designed and optimized for small samples and small budgets.

MSE Supplies is an authorized distributor of Anric Technologies for USA and Canada.