Thermal oxide (silicon dioxide, SiO₂) layer is formed on silicon wafer surface at an elevated temperature in the presence of an oxidant. This process is commonly referred to as a thermal oxidation process. The SiO₂ thermal oxide thin film is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C.

Silicon/silicon dioxide (Si/SiO₂) thermal oxide wafers and substrates are widely used for FET substrates, surface microscopy analysis, ellipsometry measurements and X-ray studies. MSE Supplies also offers monolayer graphene film on Si/SiO₂substrate. (10mm x 10mm, 1 inch x 1 inch, and more...)

We can offer a variety of choices for customization. Please contact us at sales@msesupplies.com for your requirements of customized products.

MSE Supplies offers the following choices:

Type of silicon wafer: N or P type
Silicon wafer doping: un-doped, P-doped or B-doped
SiO₂thickness: 300~500 nm. The standard thickness is 300 nm.
Electrical resistivity: un-doped (>1000 Ωcm), P or B doped (10^-3~10⁴Ωcm)
Crystal orientations: (100), (111) and (110)
Substrate sizes: 10x10 mm, 15x15 mm, 2", 3", 4" or customized
Thickness: 0.3~0.5 mm, 1.0 mm or customized
Surface polishing: Single Side Polished (SSP) or Double Side Polished (DSP)

Properties
Crystal Structure of Si	Face-centered cubic
Melting Point	1410 ℃
Density	2.4 g/cm³
SiO₂Thermal Oxide Film Thickness	300 nm
EPD	≤100∕cm²
Oxygen Content	≤1~1.8 x 10^18 atoms/cm³
Carbon Content	≤5 x 10^16 atoms/cm³
Size Tolerance	<±0.1mm
Thickness Tolerance	<±0.015mm or <±0.005mm upon request
Wafer Orientation Precision	±0.5°
Edge Orientation Precision	2° (1° if requested)
Packing	Packed with class 100 clean wafer case or bag in a class 1000 cleanroom