News — GaN
GaN Semiconductor Devices Market to Grow at 17% CAGR By 2024 and Reach >US$3.4 Billion
Posted by MSE Supplies on
Market Research illustrates the growth opportunities of the global GaN semiconductor devices at US$3,438.4 million by 2024. The market, which had a valuation of US$870.9 mn in 2015, is expected to exhibit an exponential CAGR of...
What are the Differences Between GaN and GaAs RF Power Amplifiers?
Posted by MSE Supplies on
The need for high power in the VHF, UHF, and microwave bands has led to transistors that can easily supply tens to hundreds of watts at RF frequencies to 10 GHz and beyond. Most of these devices are made with gallium arsenide (...
Pulsed RF power device markets up to 4GHz: GaN, SiC, Si and GaAs based technologies
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The high-power pulsed RF semiconductor device market is primarily driven by several specific sub-segments. They are as follows: Avionics Sub-1 GHz Radar L-Band Radar S-Band Radar The end-customers for these devices are primaril...
Transition metal impurities can kill the efficiency of GaN-based LEDs
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Using advanced first-principles calculations, University of California, Santa Barbara (UCSB) researchers have demonstrated the mechanism by which transition metal impurities – iron in particular – can act as nonradiative recomb...
Gallium Nitride (GaN) substrates market to cross $4 billion USD by 2020: It's Applications and Market
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The gallium nitride (GaN) substrates market is set to cross $4 billion USD by 2020, according to the market research report “Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on sapphire, GaN on Si, GaN on SiC, GaN...