Silicon bonded wafer refers to a structure that consists of two or more silicon wafers that are bonded together using a bonding technique. There are a variety of wafer bonding techniques, including plasma activated bonding, adhesive bonding, anodic bonding, direct wafer bonding, etc. Among all these techniques, we use direct wafer bonding as the main manufacturing method. Silicon bonded wafer is an alternative for thick epitaxial wafers. It creates a single wafer-like structure with improved mechanical, thermal, or electrical properties and functionality compared to single wafer. It is widely used in semiconductor device fabrication, including microelectronic devices, power devices, optoelectronics, etc.

Capability:

Parameter	Specification Range
Diameter	100 ~ 200 mm
Device Layer
Thickness	≥ 20 μm
Type	P or N (please specify if you need certain dopant)
Orientation	(100) or (111) or (110)
Handle Wafer
Thickness	200 ~ 1100 um
Type	P or N (please specify if you need certain dopant)
Resistivity	Customized

*The figure is for reference only. The actual product may look different due to configuration difference.

References:

Moriceau, H., Rieutord, F., Fournel, F., Le Tiec, Y., Di Cioccio, L., Morales, C., ... & Deguet, C. (2010). Overview of recent direct wafer bonding advances and applications. Advances in Natural Sciences: Nanoscience and Nanotechnology, 1(4), 043004.

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