MSE PRO™ Square Sample Sapphire Wafer C-Plane Al₂O₃ Single Crystal

Customized sapphire wafers and windows are available upon request

Material: High Purity >99.99%, single crystal Al₂O₃
Dimension: 10x10mm
Thickness: 1mm other thickness available upon request
Lattice Parameter: a=4.785 A, c=12.991 A
Density: 3.98 g/cm³
Orientation: C plane (0001) to M (1-100) 0.2 +/- 0.1 degree off.
Thermal Expansion Coefficient: 6.66 x 10^-⁶ / °C parallel to C axis, 5 x 10^-⁶ /°C perpendicular to C axis
Dielectric Strength: 4.8 x 10⁵ V/cm
Dielectric Constant: 11.5 (1 MHz) along C axis, 9.3 (1 MHz) perpendicular to C axis
Dielectric Loss Tangent (a.k.a. dissipation factor): less than 1 x 10^-⁴
Thermal Conductivity: 40 W/(m.K) at 20℃
Polishing: single side polished (SSP) polished side surface Ra < 0.3 nm (AFM), back side fine-ground Ra = 0.8 ~ 1.2 um, or double side polished (DSP) both front and back sides surface Ra < 0.3 nm (AFM)

MSE PRO™ Square Sample Sapphire Wafer C-Plane Al2O3 Single Crystal