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Single Crystals, Wafers and Substrates | MSE Supplies LLC– Tagged "semiconductors"

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semiconductors

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1 inch Ammonothermal High Electron Concentration N-type Free-Standing Gallium Nitride (GaN) Substrate - MSE Supplies LLC

1 inch Ammonothermal High Electron Concentration N-type Free-Standing Gallium Nitride (GaN) Substrate
$ 2,76095
1 inch Ammonothermal High Transparency N-type Free-Standing Gallium Nitride (GaN) Substrate - MSE Supplies LLC

1 inch Ammonothermal High Transparency N-type Free-Standing Gallium Nitride (GaN) Substrate
$ 2,78095
1.5 inch Ammonothermal Semi-insulating Free-Standing Gallium Nitride (GaN) Substrate - MSE Supplies LLC

1.5 inch Ammonothermal Semi-insulating Free-Standing Gallium Nitride (GaN) Substrate
$ 7,60095
2 in Silicon Carbide Wafers 4H N-type or Semi-Insulating SiC Substrates - MSE Supplies LLC

2 in Silicon Carbide Wafers 4H N-type SiC Substrates
$ 59595
2 inch Ammonothermal High Electron Concentration N-type Free-Standing Gallium Nitride (GaN) Substrate - MSE Supplies LLC

2 inch Ammonothermal High Electron Concentration N-type Free-Standing Gallium Nitride (GaN) Substrate
$ 6,76095
2 inch Ammonothermal High Transparency N-type Free-Standing Gallium Nitride (GaN) Substrate - MSE Supplies LLC

2 inch Ammonothermal High Transparency N-type Free-Standing Gallium Nitride (GaN) Substrate
$ 7,60095
4 in Silicon Carbide 4H-SiC N-Type Ingot, Production Grade - MSE Supplies LLC

4 in Silicon Carbide 4H-SiC N-Type Ingot, Production Grade
4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade - MSE Supplies LLC

4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade
$ 5,50000
4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates - MSE Supplies LLC

4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates
4 inch High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating SiC Substrates - MSE Supplies LLC

4 inch High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating SiC Substrates (HPSI)
$ 79500