Sapphire Wafer, 4 inch, C-plane (0001), Prime Grade

Customized sapphire wafers and windows are available upon request

Product SKU#: WA0408 for single side polished, WA0409 for double side polished
Material: High Purity, >99.99%, single crystal Al₂O₃
Dimension: 100.0 mm +/- 0.1 mm
Thickness: 650 um +/- 25 um (SSP) , 600 um +/- 25 um (DSP)
Lattice Parameter: a=4.785 A, c=12.991 A
Density: 3.98 g/cm³
Orientation: C plane sapphire (0001) off M plane 0.2+/- 0.1 degree, R-plane (1-102), A-plane (11-20), M-plane (10-10) are available.
Primary flat orientation: A-plane +/- 0.2 degree
Primary flat length: 30.0 +/- 1 mm
Total Thickness Variation (TTV): <20 um
Bow: <20 um
Warp: <20 um
Thermal Expansion Coefficient: 6.66 x 10^-⁶ / °C parallel to C axis, 5 x 10^-⁶ /°C perpendicular to C axis
Dielectric Strength: 4.8 x 10⁵ V/cm
Dielectric Constant: 11.5 (1 MHz) along C axis, 9.3 (1 MHz) perpendicular to C axis
Dielectric Loss Tangent (a.k.a. dissipation factor): less than 1 x 10^-⁴
Thermal Conductivity: 42W/(m.K) at 20℃
Polishing: single side polished (SSP) front side epi-ready surface Ra < 0.5 nm (AFM), back side fine-ground Ra = 0.8 ~ 1.2 um, or double side polished (DSP) both front and back sides epi-ready surface Ra < 0.5 nm (AFM)

This product has been added to the cart.