MSE PRO™ 2 Inch Silicon/Silicon Dioxide (Si/SiO₂) Wet Thermal Oxide Silicon Wafer, Prime Grade, 300nm

Thermal oxide (silicon dioxide, SiO₂) layer is formed on silicon wafer surface at an elevated temperature in the presence of an oxidant. This process is commonly referred to as a thermal oxidation process. The SiO₂ thermal oxide thin film is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C.

Silicon/silicon dioxide (Si/SiO₂) thermal oxide wafers and substrates are widely used for FET substrates, surface microscopy analysis, ellipsometry measurements and X-ray studies. MSE Supplies also offers monolayer graphene film on Si/SiO₂substrate. (10mm x 10mm, 1 inch x 1 inch, and more...)

We can offer a variety of choices for customization. Please contact us for your requirements of customized products.

Specifications:

Silicon wafer doping: Undoped
Orientation: 100
SiO₂thickness: 300nm (+/-10%).
Electrical resistivity: >10,000 ohm-cm
Crystal orientation: <100>
Wafer diameter: 50.8 mm
Wafer thickness: 525+/-20 um
Surface polishing: Single Side Polished (SSP)

MSE PRO™ 2 Inch Silicon/Silicon Dioxide (Si/SiO2) Wet Thermal Oxide Silicon Wafer, Prime Grade, 300nm

MSE PRO™ 2 Inch Silicon/Silicon Dioxide (Si/SiO₂) Wet Thermal Oxide Silicon Wafer, Prime Grade, 300nm

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SiO2/Si