MSE PRO High Purity 5N (99.999%) Gallium Phosphide (GaP) Pieces (1-5mm) Evaporation Materials
MSE PRO™ High Purity 5N (99.999%) Gallium Phosphide (GaP) Pieces (1-5mm) Evaporation Materials
Gallium Phosphide (GaP) is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. It can be used to created n-type or p-type semiconductors by adding different kinds of dopants. When evaporated, it is used to created optical coating. Its refractive index varies between ~3.2 and 5.0 across the visible range, which is higher than most of other semiconducting materials. In its transparent range, its index is higher than almost any other transparent material, including gemstones such as diamond, or non-oxide lenses such as zinc sulfide.
The dimensions and purities can be customized upon request. Please contact us for customization or bulk orders.
|Molecule Weight (g/mol)||100.697|
|Color/Appearance||Pale orange solid|
|Melting Point (°C)||1,457|
|Theoretical Density (g/cm3)||4.138|
|Solubility in Water||Insoluble|
|Band Gap (eV)||2.24|
|Electron Mobility (cm2/(V·s))||300|
|Magnetic Susceptibility (χ) (cgs)||-13.8×10−6|
|Thermal Conductivity (W/(cm·K))||0.752|
|Refractive Index (nD)||
MSE Supplies offers a variety of crucibles for evaporation materials. We can customize the dimensions based on your requirements.
1. Growth conditions and morphological pecularities of gallium phosphide whiskers obtained by thermal evaporation in vacuum. physica status solidi (a) 8, no. 2 (1971): 521-529.
2. Gallium–Phosphide Films Deposited by Sputtering. Journal of Vacuum Science and Technology 7, no. 1 (1970): 110-114.
3. Vapor-phase synthesis of gallium phosphide nanowires. Crystal Growth and Design 9, no. 1 (2009): 525-527.
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