MSE PRO 4 inch Aluminum Scandium Nitride AlScN Template on Sapphire (0001)
MSE PRO™ 4 inch Aluminum Scandium Nitride AlScN Template on Sapphire (0001)
- Product SKU#: WA0104
- Substrate Thickness: Sapphire, 650+/- 20 µm
- Substrate Structure: Sapphire (0001), C-plane
- Diameter: 100+/-0.5 mm
- Thickness of AlScN layer: 800 nm
- Usable Area: > 95%
- Orientation: C plane (0001) +/- 1 degree
- Total Thickness Variation (TTV): ≤ 20 µm
- Bow/Warp: ≤ 40 µm
- Crystallinity: XRD FWHM of (0002) ≤ 200 arcsec
- Surface Roughness: Ra ≤ 10 nm (5 µm x 5 µm area)
- Polishing: Single side polished (SSP) is standard. Double-side polished (DSP) is available upon request.
- Package: single wafer containers
Aluminum scandium nitride (AlScN) on sapphire refers to the deposition of a thin AlScN film on a sapphire substrate. This process involves growing a layer of AlScN material on the surface of a sapphire wafer using techniques such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Aluminum scandium nitride (AlScN) is a a wide-band gap semiconductor material composed of aluminum (Al), scandium (Sc), and nitrogen (N). Due to its excellent piezoelectric and acoustic properties, it is an ideal material for high-frequency acoustic devices. It is considered as the most promising substrate for 5G radio frequency SAW/BAW filters.
Note:1. The crystalline quality may not be as good as indicated by XRD when tested using other methods.
2. Apart from the AlScN layer, there is an AlN buffer layer.
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