MSE PRO 300 mm P Type (B-doped) Test Grade Silicon Wafer <100>, DSP, 1-100 ohm-cm
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Product SKU#: WA0809
- Material: Single Crystal Silicon Wafer
- Growth Method: CZ
- Orientation: <100> +/- 1 deg
- Diameter: 300 mm +/- 0.2 mm
- Thickness: 775 um +/- 25 um
- Notch Orientation: <110> +/-1 deg
- Type/ Dopant: P/ Boron
- Electrical Resistivity: 1-100 ohm-cm
- Surface Finish: Double Side Polished (DSP)
- Particle: < 50ea @ >90 nm
- TTV: < 30 µm
- WARP: < 50 µm
- BOW: < 50 µm
Test grade wafers are very similar to prime wafers. Their flatness (TTV,BOW,WARP), cleanliness (particles), and other specifications are usually less rigorous than prime wafers, but still more than enough for testing equipments and can be applied to many industries. As an more affordable option, they are often used in equipment and fabrication testing projects that require a large quantity of wafers.
Please contact us if you need to place bulk orders or need customization.