MSE PRO 2 inch Aluminum Nitride (AlN) Single Crystal Substrate
SKU: WA1921
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MSE PRO™ 2 inch Aluminum Nitride (AlN) Single Crystal Substrate
MSE supplies offers high quality 2 inch Aluminum Nitride (AlN) Single Crystal Substrate. It has one of the widest bandgap energy among group Ⅲ-Ⅴ semiconductors. It also present several other superior properties including high thermal conductivity, great chemical resistance, high electrical insulation, structural compatibility with III-nitrides (good for epitaxial growth), etc. It is widely used for RF transistors, UV LEDs, and electronic devices.
*Please note that we will kindly ask you to fill in a declaration form according to the law.
Technical Specification:
| SKU# | WA1921 | WA1923 |
| Diameter | 50.8 ± 0.38 mm | 50.8 ± 0.5 mm |
| Thickness | 550 ± 50 µm | 400 ± 50 µm |
| Orientation |
{0001} ± 0.5°
|
{0001} ± 0.5°
|
| Primary Flat Orientation |
{1-100} ± 5.0°
|
{10-10} ± 5.0°
|
| Primary Flat Length |
15.88±1.65mm
|
16.0±2.0mm
|
| Secondary Flat Orientation |
90° from the primary flat (clockwise when Al-face up)
|
90° from the primary flat (clockwise when Al-face up)
|
| Secondary Flat Length |
8.00 ±1.65mm
|
8.0±2.0mm
|
| Optical Absorbance @265nm | ≤ 30 cm-1 | ≤ 100 cm-1 |
| Surface Finish | Al-face: CMP N-face: Optical Polished |
Al-face: CMP N-face: Optical Polished |
| Bow |
≤ 10 μm |
≤ 30 μm |
| TTV | ≤ 25 μm |
≤ 30 μm |
| Edge Defects | ≤ 2 within edge exclusion | ≤ 2, maximum of 1.0 mm length and width |
Please contact us for bulk order.