GaAs Gallium Arsenide Crystal Substrates
Please contact us for options for GaAs crystal substrates and wafers, such as doping, size, surface polishing, and other product parameters.
Main Parameters for GaAs Gallium Arsenide Crystal Substrates |
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single crystal
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Dopant
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Conduction type
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Carrier concentration cm-3
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Growth method
Max size
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GaAs
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None
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SI, semi-insulating
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/
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LEC
HB
Dia. 3
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Si
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N type
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>5 x 10^17
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Cr
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SI, semi-insulating
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/
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Fe
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N type
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~2 x 10^18
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Zn
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P type
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>5 x 10^17
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Sizes (mm)
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10x10mm, 2 inch diameter
Special size and orientation options are available upon request
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Surface Roughness
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Surface roughness(Ra): <= 5A
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Polishing
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Single or double side polished (standard is SSP)
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