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Boron Carbide Sputtering Target B<sub>4</sub>C,  MSE Supplies

Boron Carbide Sputtering Target B4C

  • £50100


Boron Carbide Sputtering Targets Specifications

To add a Cu Backing Plate with Indium Bonding for Sputtering Targets  

  • Purity: 99.5%
  • Density: 2.51g/cc
  • Shape: Discs, Plate, Step ( Dia 300mm, Thickness 1mm) Rectangle, Sheet, Step ( Length1000mm,Width 300mm, Thickness 1mm) Tube( Diameter< 300mm, Thickness >2mm, )
  • Custom sizes are available.
  • Application: B4C in general are used for wear-resistant films and semi-conducting films.

B4C are used as diffusion barriers in both silicon and III-V device technology in multilevel metallization schemes involving aluminum as a second level.

Boron Carbide Powder - B4C

  • Purity: 99.5%,98%
  • Shape: Powder

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