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Pulsed RF power device markets up to 4GHz: GaN, SiC, Si and GaAs based technologies

Posted by MSE Supplies on

The high-power pulsed RF semiconductor device market is primarily driven by several specific sub-segments. They are as follows: Avionics Sub-1 GHz Radar L-Band Radar S-Band Radar The end-customers for these devices are primaril...

2016 R&D 100 Award for High Temperature SiC Device for Electric Vehicles

2016 R&D 100 Award for High Temperature SiC Device for Electric Vehicles

Posted by MSE Supplies on

Wolfspeed, A Cree Company, a leading global supplier of silicon carbide (SiC) power products — including best-in-class SiC MOSFETs, Schottky diodes, and modules — won a 2016 R&D 100 Award for its high temperature, wide band...