Researchers at Tohoku University have discovered a method to quickly, cost-effectively, and non-destructively detect carbon impurities in nitride-based crystals that are used in electrical and optical devices such as LEDs and transistors. Light can be used to analyze...
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Researchers at the Pohang University of Science & Technology (POSTECH) Department of Chemistry have discovered that redox reactions can be used to control the properties of two-dimensional (2D) materials. Redox reactions between water and oxygen molecules in the...
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Researchers at the University of Delaware have developed a new, high-electron mobility transistor based on gallium nitride (GaN) with a barrier of indium aluminum-nitride on top of a silicon substrate.
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An international conglomerate of scientists and researchers from Drexel, Stanford, Graphene Labs, the Center for Advancing Electronics Dresden (CFAED) and others have collaborated to develop a report that details how the future of energy storage technology lies in...
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MSE Supplies joined materials scientists and engineers at the 2019 MRS Fall Meeting & Exhibit in Boston, MA (December 1-6, 2019) at Booth 719. Â
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Researchers at the University of Illinois at Chicago have used computer-based simulations to discover the general mechanism that governs crystal growth in materials – fluctuations in the solvent shield.
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