MSE PRO 6-inch Ultrathin Single-Crystalline AlN(30~50nm)/Sapphire Templates
SKU: SU6035
MSE PRO™ 6-inch Ultrathin Single-Crystalline AlN/Sapphire Substrate
The Ultrathin Single-Crystalline AlN/Sapphire Substrates are prospective platforms for UVB/UVC-LEDs and GaN electrical power devices. The ultrathin AlN template whose AlN-thickness is as low as 30~50 nm presents ultra-flat step-flow morphology (RMS≤0.3 nm) and slight tensile-strain, which are both benefitting for upper AlGaN-material/device epitaxy.
Key Features:
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Material: Composed of single-crystalline aluminum nitride (AlN) on sapphire substrates.
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Thickness: Ultrathin AlN layer with a thickness as low as 30~50 nm.
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Surface Morphology: Ultra-flat step-flow morphology with a root mean square (RMS) roughness of ≤0.3 nm.
Applications:
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UVB/UVC-LEDs: Suitable for the development of ultraviolet light-emitting diodes in the UVB and UVC spectra.
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GaN Electrical Power Devices: Perfect for high-performance GaN-based power electronic devices.
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Optoelectronics: Ideal for advanced optoelectronic applications requiring high crystalline quality and ultra-flat surfaces.
Specifications:
| Diameter | 6-inch |
| Substrate Thikness | 1000±10μm |
| Surface Polishing | Single/Double polish |
| Orientation | c-plane±0.2° |
| AlN Thickness |
30~50 nm
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| Thickness Nonuniformity | ≤ 1.5% |
| FWHM-RC (002) | ≤300 arcsec |
| FWHM-RC (102) | ≤600 arcsec |
| Surface RMS | ≤ 0.3nm |
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Usable Area |
>95% |
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Strain State
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Tensile Strain
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Please note consumable products are non refundable or eligible for return. Quality issues or concerns must be reported within 1 week of delivery.
Single Crystal Quartz Wafers and Substrates are also available. Please Contact us for more details or Customization.