Free-standing (single crystal) GaN substrate, C plane (0001), size 2" diameter
Conductivity type: N-type (undoped)
- Dimension: 2" diameter
- Thickness: 350 +/- 25 um
- Usable area: >90%
- Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg +/- 0.15 deg
- Total Thickness Variation: <15 um
- Bow: < 20 um
- Resistivity (300K): < 0.5 Ohm.cm
- Carrier Concentration: 1e17cm-3
- Mobility: 500 cm2/(V*s)
- Dislocation Density: < 9 x 105 cm-2
- Polishing: Front surface: Ra < 0.5 nm, epi-ready polished. back surface fine ground.
- Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.
Related Reference
1. Blue InGaN/GaN laser diodes grown on (33
) free¨«standing GaN substrates
https://doi.org/10.1002/pssc.201001012
2.Review: InGaN-BASED LASER DIODES
https://www.jsap.or.jp/jsapi/Pdf/Number01/Vol-1_Cutting%20Edge.pdf