MSE PRO InAs Indium Arsenide Single Crystal Substrates
SKU: SU1721
MSE PRO™ InAs Indium Arsenide Single Crystal Substrates
Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1 ~ 3.8 um. The detectors are usually photovoltaicphotodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Find indium arsenide for sale here today
Available Orientation: <100>
Available Sizes: 5x5x0.5 mm, 10x10x0.5 mm, 2 inch diameter, 30 mm diameter.
Doping Options: Undoped, S doping, Zn doped, and Sn doped.
| Physical Properties | |
|---|---|
|
Chemical formula
|
InAs |
| Molar mass | 189.740 g/mol |
| Density | 5.67 g/cm3 |
| Melting point | 942°C (1,728°F; 1,215K) |
| Band gap | 0.354 eV (300 K) |
| Electron mobility | 40000 cm2/(V*s) |
| Thermal conductivity | 0.27 W/(cm*K) (300 K) |
|
Refractive index(nD)
|
3.51 |
| Structure | |
|
Crystal structure
|
Zinc Blende |
|
Lattice constant
|
a = 6.0583 Å
|