MSE PRO GaAs Gallium Arsenide Crystal Substrates
SKU: SU1701
Please contact us for options for GaAs crystal substrates and wafers, such as doping, size, surface polishing, and other product parameters.
Main Parameters for GaAs Gallium Arsenide Crystal Substrates |
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single crystal
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Dopant
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Conduction type
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Carrier concentration cm-3
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Growth method
Max size
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GaAs
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None
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SI, semi-insulating
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/
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LEC
HB
Dia. 3
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Si
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N type
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>5 x 10^17
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Cr
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SI, semi-insulating
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/
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Fe
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N type
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~2 x 10^18
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Zn
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P type
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>5 x 10^17
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Sizes (mm)
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10x10mm, 2 inch diameter, 3 inch diameter, 4 inch diameter
Special size and orientation options are available upon request
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Surface Roughness
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Surface roughness(Ra): <= 5A
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Polishing
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Single or double side polished
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Shipping and handling: This material is classified as a hazmat and requires special packaging and shipping to comply with regulatory requirements. Please contact us for specific details with shipping and handling.