MSE PRO Erbium (III) Oxide (Er2O3) 99.99% 4N Powder
Erbium (III) Oxide, Er2O3, 99.99% 4N High Purity Powder
- Product Number: PO2701 (50 g), PO2702 (100 g), PO2704 (500 g), PO2703 (1 kg)
- Formula: Er2O3
- CAS Number: 12061-16-4
- Molecular Weight: 382.56 g/mol
- Density: 8.64 g/cm³ at 25°C
- Melting Point: 2344°C
- Color: pink powder
- Solubility: Insoluble in water.
- Purity: 99.99% 4N (TREO*)
* TREO - Total Rare Earth Oxides
Applications
Er2O3 (Erbium (III) Oxide or Erbium Sesquioxide) is used in ceramics, glass, and solid stated lasers. Er2O3 is commonly used as an activator ion in making laser materials.
Notes: More detailed product information including SDS, certificate of analysis (COA), lead time and volume pricing are available upon request.
| Rare Earth Impurities Content (ppm) | Non- Rare Earth Impurities Content (ppm) |
| La2O3 1.00 | Fe2O3 4.50 |
| CeO2 1.00 | CaO 15.00 |
| Pr6O11 1.00 | SiO2 12.00 |
| Nd2O3 1.00 | Cl- 40.00 |
| Sm2O3 1.00 | |
| Eu2O3 1.00 | |
| Gd2O3 1.00 | Loss on Ignition (L.O.I.) <1 % |
| Tb4O7 1.00 | |
| Dy2O3 1.00 | |
| Ho2O3 1.00 | |
| Tm2O3 17.00 | |
| Yb2O3 3.00 | |
| Lu2O3 7.00 | |
| Y2O3 25.00 |
References
Superior electrical properties of crystalline Er2O3 films epitaxially grown on Si substrates. S. Chen, Y. Y. Zhu, R. Xu, Y. Q. Wu, X. J. Yang, Y. L. Fan, F. Lu, and Z. M. Jianga, Applied Physics Lett. Vol. 88, 2006.
Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors. F.H. Chen, J.L. Her, Y.H. Shao, and T.M. Pan. Nanoscale Res. Lett. Vol. 8(1) Pg 18, 2013.
Raman and Fluorescence Spectroscopy of CeO2, Er2O3, Nd2O3, Tm2O3, Yb2O3, La2O3, and Tb4O7, J. Cui, and G. Hope. Journal of Spectroscopy. Vol. 2015, Article ID 940172, 2015.