MSE PRO Customized Silicon Bonded Wafer (4"-8")
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Silicon bonded wafer refers to a structure that consists of two or more silicon wafers that are bonded together using a bonding technique. There are a variety of wafer bonding techniques, including plasma activated bonding, adhesive bonding, anodic bonding, direct wafer bonding, etc. Among all these techniques, we use direct wafer bonding as the main manufacturing method. Silicon bonded wafer is an alternative for thick epitaxial wafers. It creates a single wafer-like structure with improved mechanical, thermal, or electrical properties and functionality compared to single wafer. It is widely used in semiconductor device fabrication, including microelectronic devices, power devices, optoelectronics, etc.
Capability:
| Parameter | Specification Range |
| Diameter | 100 ~ 200 mm |
| Device Layer | |
| Thickness | ≥ 20 μm |
| Type |
P or N (please specify if you need certain dopant) |
| Orientation | (100) or (111) or (110) |
| Handle Wafer | |
| Thickness | 200 ~ 1100 um |
| Type |
P or N (please specify if you need certain dopant) |
| Resistivity | Customized |
*The figure is for reference only. The actual product may look different due to configuration difference.
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