MSE PRO 4 inch Undoped Aluminum Nitride AlN (500nm) Template on Silicon <111>,p-type, SSP

MSE PRO 4 inch Undoped Aluminum Nitride AlN (500nm) Template on Silicon <111>,p-type, SSP

Introduction

MSE Supplies offers high-quality UV Grade AlN grown by PVDNC on Silicon Templates, designed to meet the stringent requirements of UVC LED applications. They can be utilized in blue LEDs, electronic devices , for epitaxial GaN growth, and for basic research. 

AlN templates exhibit exceptional crystalline quality, with (002) and (102) XRD full-width at half maximum (FWHM) linewidths under 100 arcsec and 300 arcsec, respectively. The surface morphology of these templates is remarkably smooth, with atomic force microscopy (AFM) measurements showing a root mean square (RMS) roughness value of less than 2 nm, and most wafers supplied to date having an RMS roughness of approximately 1 nm.

Specifications

• Substrate: p-type Silicon <111>, 500 +/- 20 um thickness
• Dimension: diameter 100 mm +/- 0.2 mm
• Thickness of AlN layer:  500 nm
• Exclusion Zone: 5 mm
• Orientation: C plane (0001) +/- 0.2 degree
• Total Thickness Variation (TTV): typically <10 um
• Crystallinity: XRD FWHM of (0002) < 300 arcsec, (102) >1 degree 
• Surface Roughness Ra Typically ~1nm rms 
• Polishing: Single side polished (SSP) is standard. Double-side polished (DSP) is available upon request.
• Package: The aluminum nitride template on silicon substrate wafer is packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere.

Atomic Force Microscopy  (AFM) Image

Research publications that cited the use of MSE Supplies AlN template product.

David Arto Laleyan, Kelsey Mengle, Songrui Zhao, Yongjie Wang, Emmanouil Kioupakis, and Zetian Mi, "Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy," Opt. Express 26, 23031-23039 (2018)

To confirm such a theoretical prediction, we compared the PL emission of h-BN with AlN, a direct bandgap semiconductor with similar energy bandgap values. Shown in Fig. 5(a) are the PL spectra of h-BN grown by plasma-assisted MBE (Sample C) and a commercial AlN epilayer sample (~4 um thick, MSE Supplies LLC) measured under the same conditions at room temperature.

S. Jublot-Leclerca, G. Bouhalia, F. Palliera, A. Declémy, "Temperature dependence of elastic strain and damage build-up in He implanted AlN", Journal of the European Ceramic Society, Volume 41, Issue 1, January 2021, Pages 259-267

An epitaxial 4–5 μm-thick layer provided by MSE supplies LLC. 

The elastic strain build-up and damage induced by 50 keV He implantation at RT and 550 °C into (0001)AlN were studied using a combination of XRD experiments, XRD simulation, and TEM experiments. Evidence for strong dynamic annealing with efficient point defect recombination is reported at RT. The point defect recombination is found to be enhanced with increasing implantation temperature where He concentration is low, indicating increased mobility of interstitial-type defects and resulting in low strain. A reversed effect is observed for He concentration exceeding 5 at.% (3 at.%) at RT (550 °C) : thermally activated mechanisms related to the nucleation and growth of He-V complexes overcome the point defect recombination and promote the strain and damage build-up. At 1 × 10¹⁷ cm⁻², only clusters of interstitials are observed at RT, whilst bubbles and basal stacking faults are additionally formed at 550 °C for a critical He concentration estimated to be close to 4–6 at.%.

MSE Supplies can offer AlN on silicon wafers from 2 inch to 8 inch upon request. 

Please contact us for customization.