MSE PRO 4 inch Tungsten (W) Thin Film on Silicon Wafer
MSE PRO™ 4 inch Tungsten (W) Thin Film on Silicon Wafer
Tungsten (W) and W-based alloyed thin films have numerous advantages, including a high melting temperature, excellent mechanical strength, and effective metal barrier capabilities. They have potential uses in X-ray technology as absorbing layers and mirrors, as well as in semiconductor interconnect layers for preventing diffusion.
Specifications:
| Size | 4 inch |
| Substrate | Silicon wafer |
| Substrate Thickness | 775 um +/- 25um |
| Substrate Doping Type | P-type/ Boron-doped |
| Substrate Orientation | <100> |
| Substrate Resistivity | 1-100 ohm-cm |
| Deposition Method | PVD |
| Substrate Surface |
Single Side Polished |
| Thin Film Material | Tungsten (W) |
| Thin Film Thickness | 50 nm - 300nm customizable |