MSE PRO 2 inch Silicon Carbide Wafers 4H/6H P-Type SiC Substrates
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MSE PRO 2 inch Silicon Carbide Wafers 4H/6H P-Type SiC Substrates
6H-P SiC crystal growth is no longer available from our suppliers. Availability is limited to our remaining inventory. Please contact us to check current inventory and availability before placing an order.
MSE Supplies offers 2 inch P-Type Silicon Carbide (SiC) Wafer in either 4H or 6H polytype. It has similar properties as the N-type Silicon Carbide (SiC) wafer, such as high temperature resistance, high thermal conductivity, high electrical conductivity, etc. P-type SiC substrate is generally used for manufacturing power devices, especially the manufacturing of Insulated Gate Bipolar Transistors (IGBT). The design of IGBT often involves P-N junctions, where P-type SiC can be advantageous for controlling the behavior of the devices.
Specifications
| Specification | Dummy Grade (D Grade) |
|---|---|
| Diameter | 50.8 mm ± 0.38 mm |
| Thickness | 350 μm ± 25 μm |
| Wafer Orientation | 0° |
| Micropipe Density | 0 cm⁻² |
| Resistivity – 4H/6H-P | ≤ 0.1 Ω·cm |
| Resistivity – 3C-N | ≤ 0.8 mΩ·cm |
| Primary Flat Orientation – 4H/6H-P | {10-10} ± 5.0° |
| Primary Flat Orientation – 3C-N | {1-100} ± 5.0° |
| Primary Flat Length | 15.9 mm ± 1.7 mm |
| Secondary Flat Length | 8.0 mm ± 1.7 mm |
| Secondary Flat Orientation | Silicon face up: 90° CW from Prime flat ± 5.0° |
| Edge Exclusion | 3 mm |
| TTV / Bow / Warp | ≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm |
| Roughness – Polish | Ra ≤ 1 nm |
| Roughness – CMP | Ra ≤ 0.2 nm |
| Edge Cracks By High Intensity Light | 1 allowed, ≤ 1 mm |
| Hex Plates By High Intensity Light | Cumulative area ≤ 3% |
| Polytype Areas By High Intensity Light | Cumulative area ≤ 5% |
| Silicon Surface Scratches By High Intensity Light | 8 scratches to 1× wafer diameter cumulative length |
| Edge Chips By High Intensity Light | 5 allowed, ≤ 1 mm each |
| Silicon Surface Contamination By High Intensity Light | None |
| Packaging | Multi-wafer Cassette or Single Wafer Container |
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Wafer and Substrate Sizes |
Wafers: 2, 4, 6 inch; smaller substrates: 5x5, 10x10mm, other sizes are available and can be custom-made upon request |
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Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.