MSE PRO 2 inch 3C-N Type Silicon Carbide Wafers (3C-SiC), Dummy Grade
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MSE PRO™ 2 inch 3C-N Type Silicon Carbide Wafers (3C-SiC), Dummy Grade
MSE Supplies offers 2 inch 3C-N Silicon Carbide Wafers N-Type SiC Substrates. It has a crystal structure of silicon carbide where the silicon and carbon atoms are arranged in a cubic lattice with diamond-like structure. It has several superior properties than the widely used 4H-SiC, such as higher electron mobility and saturation velocity. It is exceptionally suitable for power electronic devices.
Specification:
| Specification | Dummy Grade (D Grade) |
|---|---|
| Diameter | 50.8 mm ± 0.38 mm |
| Thickness | 350 μm ± 25 μm |
| Wafer Orientation | On axis: <111> ± 0.5° for 3C-N |
| Micropipe Density | 0 cm⁻² |
| Resistivity – 4H/6H-P | ≤ 0.1 Ω·cm |
| Resistivity – 3C-N | ≤ 0.8 mΩ·cm |
| Primary Flat Orientation – 4H/6H-P | {10-10} ± 5.0° |
| Primary Flat Orientation – 3C-N | {1-100} ± 5.0° |
| Primary Flat Length | 15.9 mm ± 1.7 mm |
| Secondary Flat Length | 8.0 mm ± 1.7 mm |
| Secondary Flat Orientation | Silicon face up: 90° CW from Prime flat ± 5.0° |
| Edge Exclusion | 3 mm |
| TTV / Bow / Warp | ≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm |
| Roughness – Polish | Ra ≤ 1 nm |
| Roughness – CMP | Ra ≤ 0.2 nm |
| Edge Cracks By High Intensity Light | 1 allowed, ≤ 1 mm |
| Hex Plates By High Intensity Light | Cumulative area ≤ 3% |
| Polytype Areas By High Intensity Light | Cumulative area ≤ 5% |
| Silicon Surface Scratches By High Intensity Light | 8 scratches to 1× wafer diameter cumulative length |
| Edge Chips By High Intensity Light | 5 allowed, ≤ 1 mm each |
| Silicon Surface Contamination By High Intensity Light | None |
| Packaging | Multi-wafer Cassette or Single Wafer Container |
* Please contact us if you need more detailed specification.
**For production grade, please contact us for availability.
***Some color variations may be visible during the production and will not affect its physical and electronic properties.
PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS
|
Property |
4H-SiC Single Crystal |
3C-SiC Single Crystal |
|
Lattice Parameters (Å) |
a=3.082 c=10.092 |
a=4.35 |
| Stacking Sequence | ABCB | ABC |
|
Density (g/cm³) |
3.23 |
2.36 |
|
Mohs Hardness |
~9.2 |
~9.2 |
|
Thermal Expansion Coefficient (CTE) (/K) |
4-5 x 10-6 |
3-4 x10-6 |
|
Dielectric Constant |
c ~ 9.66 |
c ~ 9.72 |
|
Doping Type |
N-type or Semi-insulating or P-type |
N-type |
|
Band-gap (eV) |
3.26 |
2.4 |
|
Saturation Drift Velocity (m/s) |
2.0 x 105 |
2.7 x 105 |
|
Wafer and Substrate Sizes |
Wafers: 2, 4, 6 inch; smaller substrates: 5x5, 10x10mm, other sizes are available and can be custom-made upon request |
|
Customization
Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.