MSE PRO 10mm x 10mm Bulk gallium nitride (GaN) substrate, n-type, 300 µm thick, Research Grade
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$ 503.95
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MSE PRO 10mm x 10mm Bulk gallium nitride (GaN) substrate, n-type, 300 µm thick, Research Grade
Features
- Ultra-low dislocation density and superior crystalline quality
- Precise control over doping levels and electrical properties
Benefits
- Exceptional electrical characteristics and carrier mobility
- Enhanced thermal stability and heat dissipation
- Improved device reliability and lifetime
Applications
- High-Power and High-Frequency Transistors (HEMTs)
- Vertical-Cavity Surface-Emitting Lasers (VCSELs)
- High-Brightness LEDs and Laser Diodes
- Power Amplifiers for Wireless Communications
- High-Temperature and Radiation-Resistant Electronics
Specifications
| Property | Specification |
|---|---|
| Material | Gallium Nitride (GaN) |
| Type | n-type |
| Grade | Research Grade |
| Size | 10 mm × 10 mm ± 0.3 mm |
| Nominal Thickness | 300 µm |
| Front Surface Finish | Ga-face, epi-ready |
| Back Surface Finish | N-face, optical polish |
Please contact us for customization.