10 x 10 x 0.5 mm N Type (P-doped) Prime Grade Silicon Wafer Substrate <100>, SSP, 1-10 ohm-cm, MSE Supplies

MSE PRO 10 x 10 x 0.5 mm N Type (P-doped) Prime Grade Silicon Wafer Substrate <100>, SSP, 1-10 ohm-cm

$ 11⁹⁵

10 x 10 x 0.5 mm N Type (P-doped) SEMI Standard Prime Grade Silicon Wafer <100>, 1-10 ohm-cm, Single Side Polished

Product SKU#: WA0807

Product Specifications

Material: Single Crystal Silicon Wafer Substrate
Growth Method: MCZ
Orientation: <100>
Dimension: 10 x 10 mm +/- 0.1 mm
Thickness: 525 um +/- 20 um (SSP)
Type/ Dopant: N/ Phosphorus
Thermal Expansion Coefficient: 2.6·10^-6°C ^-1
Electrical Resistivity: 1-10 ohm-cm
Oxygen Content: 1.6 x 10^18 atoms/cm3
Carbon Content: 0.5 ppm
Front Surface: CMP Polished, Ra < 0.5 nm (single side polished, SSP)
LPD & COP Particles: <=20 @ >=0.3 um size

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