MSE PRO 6 Inch Ge Germanium Single Crystal Wafers
Regular price
$ 1,399.95
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MSE PRO™ 6 Inch Ge Germanium Single Crystal Wafers
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Growth method
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Czochralski method
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Crystal structure
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M3
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Unit cell constant
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a=5.65754 Å
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Density
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5.323 g/cm3
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Melt point
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937.4 °C
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Doped material
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Ga - doped
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Type
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P
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Resistivity
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5~50 mOhm-cm
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EPD
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<5000 /cm2
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Size
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dia 6" (150mm)
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Thickness
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225um +/- 25um
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Polishing
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Single or double side polished
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Crystal orientation
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(100) +/- 6deg off toward <111>
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Surface roughness Ra:
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Rms or Ra ~ 5 A
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