Boron-Doped Diamond on Silicon Substrate-10mm x 10mm x 3mm-1 pc
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Boron-Doped Diamond on Silicon Substrate-10mm x 10mm x 3mm-1 pc
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Description
A Boron-Doped Diamond (BDD) on Silicon Substrate (Si) is a high-performance material that combines the excellent properties of diamond with the versatility of silicon. The substrate consists of a conductive silicon wafer that is coated with a thin layer of boron-doped diamond. Boron doping introduces p-type conductivity to the diamond layer, enhancing its electrical properties and making it suitable for use in electrochemical applications.
Both sides of the silicon substrate are coated with BDD.
This material offers a unique combination of attributes, including the high thermal conductivity, electrical conductivity, and hardness of diamond, along with the well-established compatibility and cost-effectiveness of silicon. Therefore, this product is a more affordable alternative to polycrystalline Boron-Doped Diamond Plate. The boron doping further improves the substrate's ability to support electrochemical reactions, offering efficient charge transport and heat dissipation.
Application Notes
Properties of BDD are particularly important in electroanalysis for the development of sensors and biosensors. BDD electrodes allow to detect many electroactive molecules in aqueous media that would otherwise be masked by water decomposition reactions at higher potentials. The surface of BDD electrode can be further (photo)functionalized or decorated. In order to enhance the electrochemical response in a presence of organic molecules, the surface of BDD can be also modified with metal nanoparticles (e.g. Au). BDD is also a broadly used electrode material for electrochemical energy storage, electrocatalysis or electrosynthesis.
Please note that this product differs slightly in electrochemical properties from the polycrystalline Boron-Doped Diamond Plate. However, in most applications, using this product as a more affordable alternative is fully justified.
Specifications
| Parameter | Specification |
|---|---|
| Thickness tolerance | < 10% |
| Oxygen evolution potential (0.5 M H₂SO₄) | 2.3 V |
| Hydrogen evolution potential (0.5 M H₂SO₄) | −0.8 V |
| Background current | 12 µA/cm² |
| Boron doping concentration | 1–5 × 10²⁰ cm⁻³ |
| Resistivity | 37 Ω·cm |
| BDD layer thickness | 8 µm |
| Grain size | 7 µm |
| Recommended long-term current density | < 80 mA/cm² |
| Electrochemically active surface area | 1.8 cm²/cm² |
| Operational pH range | 1–13 |
MSE offers a range of electrodes. Please contact us for more information.